Asymmetric recessed gate MOSFET and method for manufacturing the same

An asymmetric recessed gate MOSFET, comprising:

• recess regions formed at a predetermined depth in a semiconductor;
• recessed gate electrodes formed at a predetermined height on a semiconductor substrate by gap-filling the recess regions;
• source and drain regions implanted with a dopant, wherein the recessed gate electrodes are misaligned with one of the source or drain regions, and self aligned with one of the source or drain regions;
• and
• spacers formed on sides of the recessed gate electrodes, wherein the source/drain regions are formed in the semiconductor substrate exposed between the spacers.

A method for manufacturing an asymmetric recessed gate MOSFET, comprising the steps of:

• forming recess regions by etching a semiconductor substrate at a predetermined depth;
• forming at least one layer of a conductive film at a predetermined height on the semiconductor substrate while gap-filling the recess regions;
• forming recessed gate electrodes by patterning the conductive film so as to be misaligned with the recess region corresponding to a source or drain region;
• forming spacers on sides of the recessed gate electrodes;
• and
• forming the source and drain regions by implanting a dopant in the semiconductor substrate exposed between the spacers.

A method for manufacturing an asymmetric recessed gate MOSFET, comprising the steps of:

• forming recess regions by etching a semiconductor substrate at a predetermined depth;
• forming at least one layer of a conductive film at a predetermined height on the semiconductor substrate while gap-filling the recess regions;
• forming recessed gate electrodes by patterning the conductive film so as to be misaligned with the recess region corresponding to a source or drain region, and self-aligned with one of the source or drain regions;
• forming spacers on sides of the recessed gate electrodes;
• and
• forming the source and drain regions by implanting a dopant in the semiconductor substrate exposed between the spacers.