Dc amplifier and semiconductor integrated circuit therefor
OwnerTakefumi Nishimuta, Hiroshi Miyagi +3inventors
InventorsTakefumi Nishimuta, Hiroshi Miyagi, Tadahiro Ohmi, Shigetoshi Sugawa, Akinobu Teramoto
Life of this patent
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Abstract
A rectangular parallelepiped projecting portion 21 having a height of HB and a width of WB is formed on a silicon substrate, and a gate oxide film is formed on a part of the top surface and the side surface of the projecting portion 21. A source and a drain are formed on both sides of the gate electrode 26 to form a MOS transistor. The MOS transistor configures a DC amplifier. The DC amplifier includes a differential amplification circuit having MOS transistors 61 and 62, thereby realizing a high-gain DC amplifier.
Claims8
A DC amplifier formed on a substrate of a semiconductor integrated circuit, comprising
- a differential amplification circuit including a MIS field-effect transistor in which a projecting portion is formed by a silicon substrate having a first crystal surface as a primary surface and a second crystal surface as a side surface, terminated hydrogen on the silicon surface is removed in plasma atmosphere of an inert gas, then a gate insulating film is formed on at least a part of a top surface and the side surface of the projecting portion at a temperature at or lower than about 550° C. in the plasma atmosphere, a gate is formed on the gate insulating film, and a drain and a source are formed on both sides enclosing the gate insulating film of the projecting portion.
A semiconductor integrated circuit, comprising on a same circuit substrate:
- a circuit including a p-channel MIS field-effect transistor and an n-channel MIS field-effect transistor in which a projecting portion is formed by a silicon substrate having a first crystal surface as a primary surface and a second crystal surface as a side surface, terminated hydrogen on the silicon surface is removed in plasma atmosphere of an inert gas, then a gate insulating film is formed on at least a part of the top surface and the side surface of the projecting portion at a temperature at or lower than about 550° C. in the plasma atmosphere, a gate is formed on the gate insulating film, and a drain and a source are formed on both sides enclosing the gate insulating film of the projecting portion;
- and
- a DC amplifier having a differential amplification circuit including the p-channel MIS field-effect transistor or the n-channel MIS field-effect transistor.
Dependencies are inferred from the claim text.