Semiconductor device and manufacturing method thereof
AssigneeElpida Memory, Inc.
InventorsTsuyoshi Kawagoe, Isamu Asano
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Abstract
A semiconductor device having a plurality of phase change devices rewritably storing data, comprising: an insulating film deposited on a semiconductor substrate using an insulating material having sufficient adhesion to a chalcogenide-based phase change material; a chalcogenide film formed by embedding the chalcogenide-based phase change material in a hole formed at each of bit areas separated from each other in the insulating film; and an electrode structure for supplying a current to each the phase change device made of the chalcogenide film in the bit area.
Claims10
A semiconductor device having a plurality of phase change devices rewritably storing data, comprising:
- an insulating film deposited on a semiconductor substrate using an insulating material having sufficient adhesion to a chalcogenide-based phase change material;
- a chalcogenide film formed by embedding said chalcogenide-based phase change material in a hole formed at each of bit areas separated from each other in said insulating film;
- and
- an electrode structure for supplying a current to each said phase change device made of said chalcogenide film in said bit area.
A semiconductor device having a plurality of phase change devices rewritably storing data, comprising:
- an insulating film deposited on a semiconductor substrate;
- a silicon nitride film formed on the sidewall surface of a hole formed at each of bit areas separated from each other in said insulating film;
- and
- a chalcogenide film formed by embedding chalcogenide-based phase change material inside said silicon nitride film in the hole;
- and
- an electrode structure for supplying a current to each said phase change device made of said chalcogenide film in said bit area.
A method of manufacturing a semiconductor device having a plurality of phase change devices rewritably storing data, comprising the steps of:
- depositing an insulating film on a semiconductor substrate using a silicon nitride film;
- forming a chalcogenide film by forming a hole at each of bit areas separated from each other in said insulating film and by embedding a chalcogenide-based phase change material in the hole;
- and
- forming an electrode structure for supplying a current to each said phase change device made of said chalcogenide film in said bit areas.
A method of manufacturing a semiconductor device having a plurality of phase change devices rewritably storing data, comprising the steps of:
- depositing an insulating film on a semiconductor substrate using a silicon oxide film;
- forming a hole at each of bit areas separated from each other in said insulating film and forming a silicon nitride film on the sidewall surface of the hole;
- forming a chalcogenide film by embedding a chalcogenide-based phase change material inside said silicon nitride film in the hole;
- and
Dependencies are inferred from the claim text.