CMOS image sensor and method for fabricating the same
AssigneeDonogbu Electronics Co., Ltd.
InventorHee Shim
Life of this patent
Estimating the term…
Abstract
A CMOS image sensor and a method for fabricating the same are disclosed, in which a dead zone and a dark current are simultaneously reduced by selective epitaxial growth. The CMOS image sensor includes a first conductive type semiconductor substrate, a second conductive type impurity ion area, a gate electrode, an insulating film formed on an entire surface of the semiconductor substrate including the gate electrode and excluding the second conductive type impurity ion area, and a silicon epitaxial layer formed on the second conductive type impurity ion area and doped with first conductive type impurity ions.
Claims12
A CMOS image sensor comprising:
- a first conductive type semiconductor substrate defined by a photodiode area and a transistor area;
- a second conductive type impurity ion area formed in the semiconductor substrate of the photodiode area;
- a gate electrode formed on the semiconductor substrate of the transistor area;
- an insulating film formed on an entire surface of the semiconductor substrate including the gate electrode and excluding the second conductive type impurity ion area;
- and
- a silicon epitaxial layer formed on the second conductive type impurity ion area and doped with first conductive type impurity ions.
A method for fabricating a CMOS image sensor comprising:
- forming a first conductive type first impurity ion area in an active area of a semiconductor substrate defined by the active area and a field area;
- forming a gate electrode on a transistor area of the active area;
- forming an insulating film on an entire surface of the semiconductor substrate including the gate electrode;
- forming a second conductive type impurity ion area in a photodiode area of the active area;
- selectively removing the insulating film on the second conductive type impurity ion area;
- growing a silicon epitaxial layer on a surface of the second conductive type impurity ion area;
- and
- forming a first conductive type second impurity ion area in the silicon epitaxial layer.
Dependencies are inferred from the claim text.