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US 2006/0138470 A1Published application
CMOS image sensor and method for fabricating the same
OwnerChang Haninventor
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Abstract
A CMOS image sensor and a method for fabricating the same are disclosed, in which a dark current is prevented from being generated between a device isolation film and a photodiode region to improve characteristics of the image sensor.
Claims12
A CMOS image sensor comprising:
- a first conductivity type semiconductor substrate defined by an active region and a device isolation region;
- a device isolation film formed in the device isolation region;
- a second conductivity type lightly doped diffusion region formed in the active region;
- and
- a first conductivity type heavily doped epitaxial layer formed in the periphery of the device isolation film including a boundary portion between the device isolation film and the second conductivity type lightly doped diffusion region.
2 more elements
A method for fabricating a CMOS image sensor comprising:
- forming a trench in a device isolation region of a first conductivity type semiconductor substrate defined by an active region and the device isolation region;
- forming a first conductivity type heavily doped epitaxial layer on a surface of the trench;
- forming a device isolation film in the trench;
- and
- forming a second conductivity type diffusion region in the active region of the semiconductor substrate to have a constant interval from the device isolation film via the first conductivity type heavily doped epitaxial layer.
2 more elements
Dependencies are inferred from the claim text.