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US 2006/0138469 A1Published application
Semiconductor device and fabricating method thereof
OwnerTae Leeinventor
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Abstract
A semiconductor device and fabricating method thereof can prevent an electrical characteristic degradation of the semiconductor device when a boarderless type contact is formed. The device may include a transistor on a semiconductor substrate, an oxynitride layer on the semiconductor sustrate,an insulating interlayer on the oxynitride layer, a metal line on the insulating interlayer, contact perforating the insulating interlayer and the oxynitride layer to electrically connect the metal line to the transistor.
Claims13
A semiconductor device comprising:
- a transistor on a semiconductor substrate;
- an oxynitride layer on the semiconductor substrate including the transistor;
- an insulating interlayer on the oxynitride layer;
- a metal line on the insulating interlayer;
- and
- a contact perforating the insulating interlayer and the oxynitride layer to electrically connect the metal line to the transistor.
3 more elements
A method of fabricating a semiconductor device, comprising the steps of:
- forming a transistor on a semiconductor substrate;
- forming an oxynitride layer on the semiconductor substrate including the transistor;
- forming at least one insulating interlayer on the oxynitride layer;
- forming a contact hole by selectively etching the at least one insulating interlayer and the oxynitride layer until a prescribed portion of the transistor is exposed;
- and
- forming a contact by filling the contact hole with a conductive substance.
3 more elements
Dependencies are inferred from the claim text.