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US 2006/0138468 A1Published application
Semiconductor device with increased channel length and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorJin-Ki Jung
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Abstract
A semiconductor device with an increased channel length and a method for fabricating the same are provided. The semiconductor device includes: a substrate with an active region including a planar active region and a prominence active region formed on the planar active region; a gate insulation layer formed over the active region; and a gate structure including at least one gate lining layer encompassing the prominence active region on the gate insulation layer.
Claims16
A semiconductor device, comprising:
- a substrate with an active region including a planar active region and a prominence active region formed on the planar active region;
- a gate insulation layer formed over the active region;
- and
- a gate structure including at least one gate lining layer encompassing the prominence active region on the gate insulation layer.
1 more element
A method for fabricating a semiconductor device, comprising:
- preparing a substrate including a planar active region;
- forming a prominence active region on the planar active region;
- rounding upper edges of the prominence active region;
- forming a gate insulation layer over the prominence active region;
- and
- forming a gate structure including at lease one gate lining layer encompassing the prominence active region on the gate insulation layer.
3 more elements
Dependencies are inferred from the claim text.