US 2006/0138459 A1 · Semiconductor device, manufacturing method of the same and electronic device

Abstract

Provided is a semiconductor device equipped with HBTs capable of satisfying both thermal stability and reliability and having improved electrostatic breakdown voltage. The HBT according to the present invention is obtained by successively forming, over the main surface of a substrate made of a compound semiconductor, a sub-collector layer, a collector layer, a base layer, an emitter layer, a collector electrode electrically connected to the collector layer, a base electrode electrically connected to the base layer, an emitter mesa layer formed over the emitter layer and electrically connected to the emitter layer, and an emitter electrode electrically connected to the emitter mesa layer. The emitter mesa layer has a semiconductor layer made of an n type GaAs layer, a high concentration semiconductor layer made of an n+ type GaAs layer over the semiconductor layer and a ballast resistor layer made of an n type InGaAs layer over the high concentration semiconductor layer.

Claims8

Dependent claims

A semiconductor device comprising a bipolar transistor made of a compound semiconductor,

wherein the bipolar transistor comprises:
a substrate;
a collector layer formed over the main surface of the substrate;
a base layer formed over the collector layer;
an emitter layer formed over the base layer and made of an InGaP layer;
a collector electrode electrically connected to the collector layer;
a base electrode electrically connected to the base layer;
an emitter mesa layer formed over the emitter layer and electrically connected to the emitter layer;
and
an emitter electrode electrically connected to the emitter mesa layer;
wherein the emitter mesa layer comprises:
a first semiconductor layer;
a second semiconductor layer formed over the first semiconductor layer;
a ballast resistor layer formed over the second semiconductor layer and made of a semiconductor layer having a greater specific resistance than that of the second semiconductor layer;
and
wherein the second semiconductor layer has a carrier concentration at least equal to that of the first semiconductor layer.

13 more elements

Dependencies are inferred from the claim text.

Semiconductor device, manufacturing method of the same and electronic device

Life of this patent

Semiconductor device, manufacturing method of the same and electronic device

Life of this patent

Abstract

Claims8