Nitride-based semiconductor device of reduced current leakage
AssigneeSanken Electric Co., Ltd.
InventorsKoji Otsuka, Nobuo Kaneko
Life of this patent
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Abstract
A high electron mobility transistor is disclosed which has a double-layered main semiconductor region formed on a silicon substrate via a multilayered buffer region. The multilayered buffer region is in the form of alternations of an aluminum nitride layer and a gallium nitride layer. The main semiconductor region, buffer region, and part of the substrate taper as they extend away from the rest of the substrate, providing slanting side surfaces. An electroconductive antileakage overlay covers these side surfaces via an electrically insulating overlay. Electrically coupled to the silicon substrate via a contact electrode, the antileakage overlay serves for reduction of current leakage along the side surfaces.
Claims10
A nitride-based semiconductor device of reduced current leakage, the semiconductor device comprising:
- (a) a substrate having a major surface;
- (b) a buffer region formed on the major surface of the substrate, the buffer region having a side surface;
- (c) a main semiconductor region having at least one nitride-based semiconductor layer formed on the major surface of the substrate via the buffer region, the main semiconductor region having a side surface;
- (d) a set of electrodes on the main semiconductor region;
- (e) a first antileakage overlay of electrically insulating material covering at least either of the side surfaces of the buffer region and the main semiconductor region;
- and
- (f) a second antileakage overlay of electroconductive material covering at least either of the side surfaces of the buffer region and the main semiconductor region via the first antileakage overlay.
Dependencies are inferred from the claim text.