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AssigneeToshiba Ceramics Co., Ltd.
InventorsJun Komiyama, Yoshihisa Abe, Shunichi Suzuki, Hideo Nakanishi
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A back electrode 6 is formed in the back of a Si single crystal substrate 2 of a compound semiconductor in which an n-type 3C-SiC single crystal buffer layer 3 having a thickness of 0.05-2 μm, a carrier concentration of 1016-1021/cm3, a hexagonal InwGaxAl1-w-xN single crystal buffer layer 4 (0≦w<1, 0≦x<1, w+x<1) having a thickness of 0.01-0.5 μm, and an n-type hexagonal InyGazAl1-y-zN single crystal layer 5 (0≦y<1, 0<z≦1, y+z≦1) having a thickness of 0.1-5 μm and a carrier concentration of 1011-1016/cm3 are stacked in order on an n-type Si single crystal substrate top 2 having a crystal-plane orientation {111}, a carrier concentration of 1016-1021/cm3, and a surf ace electrode 7 is formed on a surface of a hexagonal InyGazAl1-y-zN single crystal layer 5, so as to provide a compound semiconductor device which causes little energy loss and allows an high efficiency and a high breakdown voltage.
A compound semiconductor in which an n-type 3C-SiC single crystal buffer layer having a thickness of 0.05-2 μm and a carrier concentration of 1016-1021/cm3, a hexagonal InwGaxAl1-w-xN single crystal buffer layer having a thickness of 0.01-0.5 μm (0≦w<1, 0≦x<1, w+x<1), and an n-type hexagonal InyGazAl1-y-zN single crystal layer (0≦y<1, 0<z≦1, y+z≦1) having a thickness of 0.1-5 μm and a carrier concentration of 1011-1016/cm3 are stacked in order on an n-type Si single crystal substrate having a crystal-plane orientation {111} and a carrier concentration of 1016-1021/cm3.
Dependencies are inferred from the claim text.