Algainn based optical device and fabrication method thereof
AssigneesEpivalley Co., Ltd., Samsung Electro-Mechanics Co., Ltd.
InventorsTae-Kyung Yoo, Joong Seo Park, Eun Hyun Park
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Abstract
The present invention relates to an AlGaInN based optical device fabricated by a new p-type AlGalnN:Mg growth method and method for manufacturing the same, including a p-type nitride semiconductor layer that is grown using both NH3 and a hydrazine based source as a nitrogen precursor, thereby an additional subsequent annealing process for extracting hydrogen is not necessary and thus the process is simple and an active layer can be prevented from being thermally damaged by subsequent annealing.
Claims25
An AlGaInN based optical device including a p-type nitride semiconductor layer that is grown using NH3 as a nitrogen precursor, wherein the p-type nitride semiconductor layer is grown using both NH3 and a hydrazine based source as the nitrogen precursor.
A method for manufacturing an AlGaInN based optical device including the step of growing a p-type nitride semiconductor layer using NH3 as an nitrogen precursor, wherein the step includes growing the p-type nitride semiconductor layer using both NH3 and a hydrazine based source as the nitrogen precursor.
The method for manufacturing an AlGaInN based optical device including a p-type nitride semiconductor layer comprising:
- a first step of growing a buffer layer on a substrate;
- and
- a second step of growing a plurality of nitride semiconductor layers including an active layer generating light by recombination of holes and electrons on the buffer layer;
- the second step further comprising the step of growing a p-type nitride semiconductor layer using both NH3 and a hydrazine based source as a nitrogen precursor after the active layer is grown.
Dependencies are inferred from the claim text.