Semiconductor light emitting device and method of manufacturing the same
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsSuk-ho Yoon, Cheol-soo Sone
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Abstract
Provided is a nitride semiconductor light emitting diode and a method of manufacturing the same. The method includes sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate, in-situ depositing a mask layer on a region of the surface of the second semiconductor layer, and selectively growing a third semiconductor layer formed in a textured structure on the second semiconductor layer by depositing a semiconductor material on the second semiconductor layer and the mask layer.
Claims8
A method of manufacturing a semiconductor light emitting diode, comprising:
- sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate;
- in-situ depositing a mask layer on a region of the surface of the second semiconductor layer;
- and
- selectively growing a third semiconductor layer formed in a textured structure on the second semiconductor layer by depositing a semiconductor material on the second semiconductor layer and the mask layer.
A semiconductor light emitting diode having a first semiconductor layer, an active layer, and a second semiconductor layer, comprising:
- a mask layer formed on the second semiconductor layer;
- and
- a third semiconductor layer formed in a textured structure on a surface of the second semiconductor layer on which the mask layer is not formed.
Dependencies are inferred from the claim text.