Light emitting device structure having nitride bulk single crystal layer
OwnerRobert Dwilinski, Roman Doradzinski +3inventors
InventorsRobert Dwilinski, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Yasuo Kanbara
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Abstract
The object of this invention is to provide a high-output type nitride light emitting device. The nitride light emitting device comprises an n-type nitride semiconductor layer, a p-type nitride semiconductor layer and an active layer therebetween, wherein the light emitting device comprises a gallium-containing nitride semiconductor layer prepared by crystallization from supercritical ammonia-containing solution in the nitride semiconductor layer.
Claims11
A light emitting device structure comprising an n-type nitride semiconductor layer, an active layer comprising an In-containing nitride semiconductor, and a p-type nitride semiconductor layer, formed on a substrate for growth,
- wherein said light emitting device structure comprises a gallium-containing nitride semiconductor layer prepared by crystallization from supercritical ammonia-containing solution formed on ternary or quaternary nitride layer in said nitride semiconductor layer.
The light emitting device structure comprising an n-type nitride semiconductor layer, an active layer comprising an In-containing nitride semiconductor, and a p-type nitride semiconductor layer, formed on a substrate for growth,
- wherein said light emitting device structure comprises a single crystal AlxGa1-xN (0≦x≦1) layer doped with impurities prepared by crystallization from supercritical ammonia-containing solution.
The light emitting device structure comprising an n-type nitride semiconductor layer, an active layer comprising an In-containing nitride semiconductor, and a p-type nitride semiconductor layer, formed on a substrate for growth,
- wherein said light emitting device structure comprises a high-resistance single crystal AlxGa1-xN (0≦x≦1) layer prepared by crystallization from supercritical ammonia-containing solution as a current confinement layer.
Dependencies are inferred from the claim text.