Heteroisomer boron carbide devices
OwnerJennifer Brand, Anthony Caruso +1inventors
InventorsJennifer Brand, Anthony Caruso, Peter Dowhen
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Abstract
Semiconductor devices formed using boron carbide heteroisomer junctions or interfaces are provided. The boron carbide heteroisomer junction devices can be incorporated into diodes and transistors.
Claims22
A semiconductor device comprising:
- a layer of boron carbide formed by decomposition of orthocarborane;
- and
- a layer of boron carbide formed by decomposition of metacarborane or paracarborane, the layers of boron carbide being joined at an interface.
A semiconductor device, comprising:
- a layer composed from a first isomer of boron carbide;
- and
- a layer composed of a second isomer of boron carbide, the layer composed of the second isomer of boron carbide being deposited on the layer composed of the first isomer.
A boron carbide diode, comprising:
- a p-type semiconducting layer formed from an orthocarborane precursor;
- and
- an n-type semiconducting layer formed from a precursor selected from the group consisting of metacarborane, paracarborane, other substituted carboranes atoms such as some phosphocarborane isomers,
A semiconductor device, comprising:
- a layer composed of a first isomer of a semiconducting material deposited on a substrate;
- a second layer composed of a second isomer of the semiconducting material, the layer composed of the second isomer being deposited on the layer composed of the first isomer;
- a third layer composed of the first isomer of the semiconducting material, the third layer being deposited on the second layer;
- an electrical connection layer formed on a surface of at least one layer composed of the first isomer;
- and
- a gate connection layer formed on a surface of the second layer.
The semiconductor device of claim 21, further comprising a substrate, wherein at least one of the layers of the semiconducting material is deposited on the substrate
The semiconductor device of claim 21, wherein the electrical connection layer comprises a bonding pad and the surface of the at least one layer composed of the first isomer has an area larger than a surface area of the bonding pad.
Dependencies are inferred from the claim text.