Liquid crystal display device and method for fabricating the same
AssigneeLG Display Co., Ltd.
InventorSeung Heo
Life of this patent
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Abstract
A liquid crystal display device according to an embodiment of the present invention a includes: a gate line on a substrate; a data line crossing the gate line to define a pixel area; a thin film transistor connected to the gate line and the data line; a semiconductor pattern extended from the thin film transistor to overlap along the data line; a gate insulating pattern that overlaps along the semiconductor pattern to insulate the gate line and the data line; a pixel electrode in the pixel area spaced apart from the gate line and the data line and connected to the thin film transistor; and a passivation film formed in an area where the pixel electrode is not present to form a border with the pixel electrode.
Claims22
A liquid crystal display device, comprising:
- a gate line on a substrate;
- a data line crossing the gate line to define a pixel area;
- a thin film transistor connected to the gate line and the data line;
- a semiconductor pattern extended from the thin film transistor to overlap along the data line;
- a gate insulating pattern that overlaps along the semiconductor pattern to insulate the gate line and the data line;
- a pixel electrode in the pixel area spaced apart from the gate line and the data line and connected to the thin film transistor;
- and
- a passivation film formed in an area where the pixel electrode is not present to form a border with the pixel electrode.
A method of fabricating a liquid crystal display device, comprising:
- a first mask process of forming a gate line on a substrate and a gate electrode connected to the gate line;
- a second mask process of forming a source/drain metal pattern including a data line crossing the gate line to define a pixel area, a source electrode connected to the data line, a drain electrode facing the source electrode, a semiconductor pattern that overlaps along and under the source/drain metal pattern to form a channel between the source electrode and the drain electrode, and a gate insulating pattern that overlaps along and under the semiconductor pattern;
- and
- a third mask process of forming a pixel electrode in the pixel area connected to the drain electrode and spaced apart from the gate line and the data line, and forming a passivation film that forms a border with the pixel electrode.
Dependencies are inferred from the claim text.