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US 2006/0138427 A1Published application
Hybrid Circuit and Electronic Device Using Same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Satoshi Teramoto
Life of this patent
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Abstract
There is disclosed a hybrid circuit in which a circuit formed of TFTs in integrated with an RF filter. The TFTs are fabricated on a quartz substrate. A ceramic filter forming the RF filter is fabricated on another substrate. Terminals extend through the quartz substrate. The TFTs are connected with the ceramic filter via the terminals. Thus, an RF module is constructed.
Claims18
A semiconductor device:
- a circuit including at least one thin film transistor, said thin film transistor comprising a semiconductor film formed on a first insulating film, a gate insulating film formed on the semiconductor film and a gate electrode formed over the semiconductor film with the gate insulating film interposed therebetween, a second insulating film covering said thin film transistor, a conductive layer formed over the second insulating film;
- and
- a passive component adjacent to said circuit wherein said first insulating film is located between said passive component and said semiconductor film,
- wherein said passive component is electrically connected to said conductive layer through a hole opened through said first insulating film and said second insulating film.
1 more element
A semiconductor device:
- a circuit including at least one thin film transistor, said thin film transistor comprising a semiconductor film formed on a first insulating film, a gate insulating film formed on the semiconductor film and a gate electrode formed over the semiconductor film with the gate insulating film interposed therebetween, a second insulating film covering said thin film transistor, a conductive layer formed over the second insulating film;
- and
- a passive component adhered to said circuit through an adhesive layer wherein said first insulating film is located between said passive component and said semiconductor film,
- wherein said passive component is electrically connected to said conductive layer through a hole opened through said first insulating film and said second insulating film.
1 more element
A semiconductor device:
- a passive component;
- a first insulating film formed over said passive component, said first insulating film adhered to said passive component through an adhesive layer;
- a semiconductor film formed on the first insulating film;
- a gate insulating film formed on the semiconductor film;
- a gate electrode formed over the semiconductor film with the gate insulating film interposed therebetween;
- a second insulating film covering said gate electrode and said semiconductor film;
- a conductive layer formed over the second insulating film wherein said conductive layer is electrically connected to said semiconductor film;
- wherein said conductive layer is electrically connected to said passive component through a hole opened through said first insulating film and said second insulating film.
5 more elements
The semiconductor device according to claim 14 wherein said semiconductor film comprises crystalline silicon.
Dependencies are inferred from the claim text.