Contact portion of semiconductor device, and thin film transistor array panel for display device including the contact portion
AssigneeSamsung Electornics Co., Ltd.
InventorsBo Sung Kim, Kwan-Wook Jung, Wan-Shick Hong, Sang-Gab Kim, Mun-Pyo Hong
Life of this patent
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Abstract
A method for manufacturing a semiconductor device including forming a first wire on a substrate, forming a lower film on the first wire, forming a photosensitive pattern on the lower film using a photosensitive material, forming contact holes for exposing the first wire by etching the lower film using the photosensitive film as an etching mas, removing part of the photosensitive film pattern by an ashing process to expose a borderline of the lower film defining the contact holes and forming second wire connected to the firs wire via the contact holes.
Claims13
A method for manufacturing a semiconductor device comprising:
- forming first wire on a substrate;
- forming a lower film on the first wire;
- forming a photosensitive pattern on the lower film using a photosensitive material;
- forming contact holes for exposing the first wire by etching the lower film using the photosensitive film as an etching mask;
- removing part of the photosensitive film pattern by an ashing process to expose a borderline of the lower film defining the contact holes;
- and
- forming second wire connected to the first wire via the contact holes.
A method for manufacturing a thin film transistor array panel for liquid crystal display comprising:
- forming gate wire including a gate line, a gate electrode connected to the gate line, and a gate pad connected to one end of the gate line;
- depositing a gate insulating film;
- forming a semiconductor layer;
- forming data wire including a data line crossing with the gate line, a source electrode connected to the data electrode and adjacent to the gate electrode, a drain electrode placed opposite to the source electrode in relation to the gate electrode, and a data pad connected to one end of the date line;
- depositing an insulating film;
- forming a photosensitive organic insulating film pattern on the insulating film;
- etching the insulating film using the organic insulating film pattern as an etching mask to expose first contact holes for exposing the gate pad or the data pad;
- performing an ashing process to expose borderline of the insulating film in the contact holes;
- and
- forming an assistant pad connected to the gate pad or the data pad via the first contact holes.
Dependencies are inferred from the claim text.