Thin-film transistor, thin-film transistor sheet and their manufacturing method
AssigneeKonica Minolta Holdings, Inc.
InventorKatsura Hirai
Life of this patent
Estimating the term…
Abstract
Disclosed are a process of manufacturing a thin-film transisitor sheet and a thin-sheet transistor sheet manufactured by the process, the process comprising providing a gate busline on a substrate, providing, on the surface of the substrate on the gate busline side, an insulation layer capable of receiving a fluid electrode material, supplying the fluid electrode material to the insulation layer, the fluid electrode material being allowed to permeate the insulation layer, forming a gate electrode from the permeated fluid electrode material to be in contact with the gate busline, forming a gate insulating layer on the gate electrode, and forming a semiconductor layer on the gate insulating layer.
Claims5
A thin-film transistor comprising a substrate and provided thereon, an insulation layer capable of receiving a fluid electrode material, a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode, the source electrode and the drain electrode connecting each other through the semiconductor layer, wherein the gate electrode is formed from the fluid electrode material which has been allowed to permeate the insulation layer.
A thin-film transistor sheet comprising a substrate, a gate busline, an insulation layer, a gate electrode comprised of a fluid electrode material, a gate insulating layer, and a semiconductor layer, the gate electrode being formed in the insulation layer and being in contact with the gate busline, wherein the thin-film transistor sheet is manufactured by a process comprising:
- providing a gate busline on a substrate, providing, on the surface of the substrate on the gate busline side, an insulation layer capable of receiving a fluid electrode material, supplying the fluid electrode material to the insulation layer, the fluid electrode material being allowed to permeate the insulation layer, forming, in the insulating layer, a gate electrode from the permeated fluid electrode material to be in contact with the gate busline, forming a gate insulating layer on the gate electrode and forming a semiconductor layer on the gate insulating layer.
Dependencies are inferred from the claim text.