CMOS image sensor and fabricating method thereof

Abstract

A CMOS image sensor and fabricating method thereof are provided, in which a microlens is additionally formed on a planarizing layer prior to a color filter forming step and by which transmission efficiency of light incident on a photodiode enhances performance of the image sensor. The CMOS image sensor includes a plurality of photodiodes on a semiconductor substrate to be uniformly spaced apart from each other, an insulating interlayer on the semiconductor substrate including the photodiodes, a protective layer on the insulating interlayer, a plurality of first microlenses on the protective layer to correspond to the photodiodes, respectively, a first planarizing layer over the substrate including the first microlenses, a color filter layer on the first planarizing layer, a second planarizing layer over the substrate including the color filter layer, and a plurality of second microlenses on the second planarizing layer to correspond to the first microlenses, respectively.

Dependencies are inferred from the claim text.