Manipulation of conductive and magnetic phases in an electron trapping semiconducting

A MOSFET structure, comprising:

• a substrate;
• a semiconductor strip array including intersecting strips of semiconductor material deposited on the substrate, the strip array defining primary electron trapping sites at the strip intersections and secondary electron trapping sites at portions of the strips between the strip intersections;
• an insulator included above the strip array;
• and
• a source, a drain, and a gate included above the insulator;
• wherein the strip array exhibits a first electromagnetic phase when a first electron concentration is present in the electron trapping sites and a second electromagnetic phase when a second electron concentration is present in the electron trapping sites.

A MOSFET structure, comprising:

• a substrate;
• a semiconductor and insulator stack deposited on the substrate, including:
• a plurality of semiconductor strip array layers, each layer including intersecting strips of semiconductor material, each strip array layer defining primary electron trapping sites at the strip intersections and secondary electron trapping sites at portions of the strips between the strip intersections;
• and
• a plurality of insulating layers interposed between successive semiconductor strip array layers;
• and
• a source, a drain, and a gate included above the semiconductor and insulator stack;
• wherein each strip array layer exhibits a first electromagnetic phase when a first electron concentration is present in the electron trapping sites and a second electromagnetic phase when a second electron concentration is present in the electron trapping sites.