Semiconductor photoelectric surface and its manufacturing method, and photodetecting tube using semiconductor photoelectric surface

A manufacturing method for a semiconductor photocathode, comprising:

• the first step of forming a photoelectric surface of a plurality of semiconductor layers, including a light absorption layer, layered on a support substrate;
• the second step of forming a metal electrode in film form that includes titanium so as to coat at least a portion of the support substrate and a portion of the light absorption layer of the photoelectric surface and so as to make ohmic contact with the light absorption layer of the photoelectric surface;
• the third step of heating, and thereby heat cleaning, the support substrate, the photoelectric surface and the metal electrode in film form, in a vacuum;
• and
• the fourth step of carrying out an activation process on the photoelectron emitting surface, which is an exposed portion of the photoelectric surface without being coated with the metal electrode in film form, so as to convert an electron affinity to a negative condition.