Charged-particle beam exposure apparatus and method
AssigneeCanon Kabushiki Kaisha
InventorTakashi Maeda
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AssigneeCanon Kabushiki Kaisha
InventorTakashi Maeda
Estimating the term…
This invention makes it possible to provide a charged-particle beam exposure apparatus which implements highly accurate pattern drawing by detecting the intensity distribution of irradiation charged-particle beams and controlling the distribution to be uniform. The charged-particle beam exposure apparatus splits a charged-particle beam irradiated from a charged-particle beam source into a plurality of charged-particle beams by a plurality of apertures formed in an aperture array (3a). The charged-particle beam exposure apparatus includes a detection unit which detects the intensity of the charged-particle beam passing through the aperture formed in the aperture array (3a), and a grid array which adjusts the intensity of the charged-particle beam on the basis of the detection result obtained by the detection unit. The charged-particle beam exposure apparatus makes the intensity distribution of the charged-particle beams which reach a wafer (5) through the plurality of apertures uniform.
A charged-particle beam exposure apparatus which splits a charged-particle beam from a charged-particle beam source into a plurality of charged-particle beams by a plurality of apertures formed in an aperture array to execute exposure using the plurality of charged-particle beams, the apparatus comprising
A charged-particle beam exposure method by a charged-particle beam exposure apparatus which splits a charged-particle beam from a charged-particle beam source into a plurality of charged-particle beams by a plurality of apertures formed in an aperture array to execute exposure using the plurality of charged-particle beams, the method comprising steps of
Dependencies are inferred from the claim text.