Ion-implanting apparatus, ion-implanting method, and device manufactured thereby

An active device, such as a semiconductor, liquid crystal, and biochip, and a passive device, such as a resistor, coil, and capacitor both manufactured by a ion-implanting apparatus, wherein the apparatus controls a variation in a beam current value by giving feedback on the beam current value measured by a beam current measuring means to at least one parameter selected from a group consisting of a shape of an ion outlet provided in an arc chamber of an ion source, a position of an extracting electrode, dopant gas flow, dopant gas pressure, current and voltage applied to a filament, arc voltage, arc current, magnetic field strength for trapping an electron inside of the arc chamber, and a position of the arc chamber.

An ion-implanting method comprising a step of controlling a variation in a beam current value by giving feedback on the beam current value measured by a beam current measuring means to at least one parameter selected from a group consisting of a shape of an ion outlet provided in an arc chamber of an ion source, a position of an extracting electrode, dopant gas flow, dopant gas pressure, current and voltage applied to a filament, arc voltage, arc current, magnetic field strength for trapping an electron inside of the arc chamber, and a position of the arc chamber.