Solid-state imaging device and radiation imaging system
AssigneeHamamatsu Photonics K.K.
InventorsHarumichi Mori, Kazuki Fujita, Ryuji Kyushima, Masahiko Honda
Life of this patent
Estimating the term…
Loading patent…
AssigneeHamamatsu Photonics K.K.
InventorsHarumichi Mori, Kazuki Fujita, Ryuji Kyushima, Masahiko Honda
Estimating the term…
N+-type semiconductor regions 12d are formed on a front surface side of a p−-type layer 12c of a semiconductor substrate 12, and these n+-type semiconductor and p−-type semiconductor constitute photodiodes. A metal wire 14 connected to an isolation region 12e is formed on a first insulating layer 13. The metal wire 14 is provided so as to extend along a row direction and along a column direction between adjacent n+-type semiconductor regions 12d, and is of grid shape when viewed from a direction of incidence of light. Signal readout lines 53 are formed on a third insulating layer 16. The signal readout lines 53 are made of metal such as aluminum, are located above the n+-type semiconductor regions 12d when viewed from the direction of incidence of light, and are provided so as to extend along the column direction.
A solid-state imaging apparatus comprising:
A solid-state imaging apparatus comprising:
Dependencies are inferred from the claim text.