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AssigneeS.O.I.Tec Silicon on Insulator Technologies S.A., a French company
InventorsThierry Barge, Walter Schwarzenbach, Jean-Marc Waechter, Thuan Truong, Bruno Ghyselen
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The invention relates to a method of splitting apart a substrate of two adjoining wafers defining between them a cleavage plane, by bringing each substrate into a substrate-receiving space; and clamping first and second jaw portions onto each substrate in such a manner as to hold each substrate and urge apart the two wafers of each substrate by co-operation between the shapes of housings in first and second portions of the two jaws, respectively. The invention also relates to a splitting method that includes bringing each substrate into a substrate-reception space; clamping together separator portions onto each substrate so as to split apart the two wafers of each substrate; and clamping the split-apart substrate wafers so as to hold the wafers together. An automated system for processing multiple substrates is also provided.
A method of splitting apart a substrate comprising two adjoining wafers defining between them a cleavage plane, which method comprises:
The method of claim 4, wherein the controlled offsetting of the wafers after they have been split apart includes moving the second portion of each jaw in translation relative to the first portion of each respective jaw in a direction perpendicular to the wafers.
A method of splitting apart substrates comprising two adjoining wafers defining between them a cleavage plane, which method comprises:
A method of splitting apart a substrate comprising two adjoining wafers defining between them a cleavage plane, which method comprises:
Dependencies are inferred from the claim text.