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US 2006/0138084 A1Published application
Selective reactive ion etching of wafers
OwnerSim Ye, Tan Tonginventors
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Abstract
The invention comprises a device for assisting in the selective reactive ion etching of wafers comprising, a graphite base plate including an opening for housing a wafer, and a plurality of graphite strips that can be arranged over the graphite base plate to select a site of a wafer housed in the base plate for etching.
Claims12
A device for assisting in the selective reactive ion etching of wafers comprising,
- a base plate including an opening for housing a wafer, and
- a plurality of strips that can be arranged over the graphite base plate to select a site of a wafer housed in the base plate for etching.
A method of selectively reactive ion etching a portion of a wafer comprising the steps of,
- placing the wafer in a base plate,
- identifying the portion of the wafer to be etched,
- arranging a plurality of strips over the wafer and base plate to cover all portions of the wafer that are not to be etched and leave exposed the portion of the wafer to be etched, and
- performing a reactive ion etch on the wafer.
1 more element
Dependencies are inferred from the claim text.