Method of wafer processing with edge seed layer removal
OwnerBulent Basol, Homayoun Taliehinventors
Life of this patent
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Abstract
A process of forming a conductive layer on a wafer is provided. A front surface and an edge surface of the wafer are coated with a seed layer. Further, the edge surface includes a back edge surface, a bevel surface and a front edge surface. During the process, the seed layer is removed from the back edge surface and the bevel surface using an etching process. Next, the conductive layer is formed by depositing a conductive material onto the remaining seed layer which coats the front edge surface and the front surface of the wafer. A part of the conductive layer which is on the front edge surface is then removed using another etching process.
Claims24
A method of forming a layer of a conductive material on a wafer, wherein a seed layer coats a front surface and an edge surface of the wafer, and wherein the edge surface includes a back edge surface, a bevel surface and a front edge surface, the method comprising the steps of:
- removing the seed layer from the back edge surface and the bevel surface;
- and
- forming the layer by depositing the conductive material onto the seed layer coating the front edge surface and the front surface of the wafer.
A method of selectively removing a seed layer from a wafer using a process solution, the seed layer coating a front surface and an edge surface of the wafer, wherein the edge surface includes a back edge surface, a bevel surface and a front edge surface, comprising the steps of:
- rotating the wafer;
- and
- applying the process solution to the back edge surface so as to remove the seed layer from the back edge surface and the bevel surface by wrapping the process solution around the back edge surface and the bevel surface.
A method of forming a layer of a conductive material on a wafer comprising a front surface, a back surface and an edge surface, the edge surface including a back edge surface, a bevel surface and a front edge surface, the method comprising the steps of:
- depositing a seed layer on the front surface and the edge surface of the wafer;
- removing the seed layer from the back edge surface and the bevel surface;
- and
- forming the layer by depositing the conductive material onto the seed layer coating the front edge surface and the front surface.
A method of forming a layer of a conductive material on a wafer using a deposition solution, wherein a seed layer coats a front surface and an edge surface of the wafer, and wherein the edge surface includes a back edge surface, a bevel surface and a front edge surface, the method comprising the steps of:
- removing the seed layer from the back edge surface, the bevel surface and a part of the front edge surface;
- establishing an electrical contact with a remaining part of the seed layer at the front edge surface;
- and
- forming the layer by electrodepositing the conductive material onto the seed layer on the remaining part of the front edge surface and the front surface.
Dependencies are inferred from the claim text.