Process method for achieving uniform stress free electro-polishing across a copper plated wafer
AssigneeLSI Logic Corporation
InventorsSteven Reder, Michael Berman
Life of this patent
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AssigneeLSI Logic Corporation
InventorsSteven Reder, Michael Berman
Estimating the term…
A method of electro-polishing a copper plated wafer. The method includes providing an opening which is at least as long as the copper plated wafer. The method includes dispensing an electrolyte through the opening such that the electrolyte contacts the copper plated wafer, and while dispensing the electrolyte through the opening, relative movement is effected between the opening and the copper plated wafer. The opening can have a uniform width, be convex, concave, or take any other shape depending on the application. The copper plated wafer can be moved linearly across the opening and can also be rotated. The electrolyte can be delivered to a process tank having a containment device thereon which provides the opening. As such, the opening functions an overflow weir.
A method of electro-polishing a copper plated wafer having a longitudinal diameter dimension, said method comprising:
Dependencies are inferred from the claim text.