Cleaning apparatus and method for electronic device

A method for cleaning electronic devices including the step of etching a target substrate placed in a cleaning chamber using a cleaning solution which is circulated for reuse in a cleaning solution circulation path including at least the cleaning chamber and a cleaning solution circulation line, the method further comprising the steps of:

• (d) determining etching temperature based on data concerning variations in amount of a target film on the target substrate etched by the cleaning solution, the variations depending on time elapsed since the cleaning solution was fed into the cleaning solution circulation path;
• (e) etching the target substrate in the cleaning chamber using the cleaning solution controlled at the determined etching temperature;
• and
• (f) rinsing the target substrate with water.

A cleaning apparatus for electronic devices comprising:

• a cleaning solution circulation path which circulates a cleaning solution therein for reuse and includes a cleaning solution circulation line which is provided with a temperature regulator mechanism for controlling the temperature of the cleaning solution and a cleaning chamber in which the target substrate is cleaned;
• and
• a control unit for measuring time elapsed since the cleaning solution was fed into the cleaning solution circulation path and determining etch time based on data concerning variations in amount of a target film on the target substrate etched by the cleaning solution, the variations depending on the elapsed time, wherein
• the target substrate is etched in the cleaning chamber using the cleaning solution for the etch time determined by the control unit.

A cleaning apparatus for electronic devices comprising:

• a cleaning solution circulation path which circulates a cleaning solution therein for reuse and includes a cleaning solution circulation line which is provided with a temperature regulator mechanism for controlling the temperature of the cleaning solution and a cleaning chamber in which the target substrate is cleaned;
• and
• a control unit for measuring time elapsed since the cleaning solution was fed into the cleaning solution circulation path and determining etching temperature based on the amount of a target film on the target substrate etched by the cleaning solution, the amount varying depending on the elapsed time, wherein
• the target substrate is etched in the cleaning chamber using the cleaning solution controlled at the etching temperature determined by the control unit.