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US 2006/0137711 A1Published application
Single-wafer cleaning procedure
OwnerKun-Yuan Liaoinventor
Life of this patent
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Abstract
A single-wafer dry cleaning procedure. First, an etched wafer having a photo resist pattern thereon is provided. Then, an ashing process is performed to remove the photo resist pattern. Finally, the etched wafer is hoisted and maintained in a suspended condition, a dry cleaning process then being performed upon the etched wafer.
Claims23
A single-wafer cleaning procedure, comprising:
- providing an etched wafer comprising a photo resist pattern on a front surface of the etched wafer;
- performing an ashiing process to remove the photo resist pattern;
- and
- hoisting the etched wafer, and performing a dry cleaning process upon the etched wafer.
1 more element
A single-wafer dry cleaning procedure, comprising:
- providing a wafer, the wafer being an etched wafer, and the etched wafer comprising a plurality of polymer particles adhered to a front surface, a back surface, and a bevel surface of the wafer;
- and
- hoisting the wafer with a pin-up function of a carrier, and performing a dry cleaning process to remove the polymer particles adhered to the front surface, the back surface and the bevel surface of the wafer.
(canceled)
Dependencies are inferred from the claim text.