Film formation apparatus and method of using the same
AssigneeTokyo Electron Limited
InventorsAkitake Tamura, Shigeru Nakajima, Tetsushi Ozaki
Life of this patent
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Abstract
A method of using a film formation apparatus for a semiconductor process includes processing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is arranged to supply the cleaning gas into the reaction chamber, and set an interior of the reaction chamber at a first temperature and a first pressure. The by-product film mainly contains a high-dielectric-constant material. The cleaning gas contains chlorine without containing fluorine. The first temperature and the first pressure are set to activate chlorine in the cleaning gas.
Claims20
A method of using a film formation apparatus for a semiconductor process, the method comprising:
- processing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus, while supplying the cleaning gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure, wherein the by-product film mainly contains a high-dielectric-constant material, the cleaning gas contains chlorine without containing fluorine, and the first temperature and the first pressure are set to activate chlorine in the cleaning gas.
A film formation apparatus for a semiconductor process, comprising:
- a reaction chamber configured to accommodate a target substrate;
- a heater configured to heat an interior of the reaction chamber;
- an exhaust system configured to exhaust the interior of the reaction chamber;
- a film formation gas supply circuit configured to supply a film formation gas, for forming a high-dielectric-constant film on the target substrate, into the reaction chamber;
- a cleaning gas supply circuit configured to supply a cleaning gas, containing chlorine without containing fluorine, into the reaction chamber;
- and
- a control section configured to control an operation of the apparatus,
- wherein the control section executes
- processing by the cleaning gas a by-product film deposited on an inner surface of the reaction chamber of the film formation apparatus, while supplying the cleaning gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure, wherein the by-product film mainly contains a high-dielectric-constant material, and the first temperature and the first pressure are set to activate chlorine in the cleaning gas.
A computer readable medium containing program instructions for execution on a processor, which, when executed by the processor, causes a film formation apparatus for a semiconductor process to execute
- processing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus, while supplying the cleaning gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure, wherein the by-product film mainly contains a high-dielectric-constant material, the cleaning gas contains chlorine without containing fluorine, and the first temperature and the first pressure are set to activate chlorine in the cleaning gas.
Dependencies are inferred from the claim text.