High density plasma chemical vapor deposition apparatus for manufacturing semiconductor

Abstract

A high-density plasma CVD apparatus designed to allow an angle of gas injectors to be adjusted according to an etching rate of a chemical mechanical polishing process. The apparatus comprises a deposition chamber constituted by an upper chamber equipped to an upper portion of the deposition chamber and a lower chamber equipped to a lower portion of the deposition chamber, an electrostatic chuck equipped to the lower chamber so as to allow a wafer to be placed thereon and connected to a high frequency power source, a plurality of gas injectors disposed on an inner side surface of the deposition chamber while being uniformly spaced a predetermined distance from each other relative to the horizontal surface for injecting source gas for a CVD process, an angle-adjusting unit for adjusting an angle of the gas injectors, and a controller for controlling operation of the high-density plasma CVD apparatus to adjust the angle of the gas injectors through the angle-adjusting unit.

Dependencies are inferred from the claim text.