Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby
AssigneeSiltron Inc.
InventorHyon-Jong Cho
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Abstract
Disclosed is a metod of fabrication of high quality silicon single crystal at high growth rate. The method grows silicon single crystal from silicon melt by Czochralski method, wherein the silicon single crystal is grown according to conditions that the silicon melt has an axial temperature gradient determined according to an equation, {(ΔTmax−ΔTmin)/ΔTmin}×100≦10, wherein ΔTmax is a maximum axial temperature gradient of the silicon melt and ΔTmin is a minimum axial temperature gradient of the silicon melt, when the axial temperature gradient is measured along an axis parallel to a radial direction of the silicon single crystal.
Claims34
A method of growing a silicon single crystal from silicon melt by Czochralski method,
- wherein the silicon single crystal is grown according to conditions that the silicon melt has an axial temperature gradient determined according to an equation,
- {(ΔTmax−ΔTmin)/ΔTmin}×100<10,
- wherein ΔTmax is a maximum axial temperature gradient of the silicon melt and ΔTmin is a minimum axial temperature gradient of the silicon melt, when the temperature gradient is measured along an axis parallel to a radial direction of the silicon single crystal.
A method of growing silicon single crystal from silicon melt by Czochralski method, wherein the silicon single crystal is grown according to an equation:
- 3≦Ln[Vs/Vc]≦5,
- wherein Vc is a rotation speed of a crucible containing the silicon melt, and Vs is the rotation speed of the silicon single crystal.
An apparatus for growing silicon single crystal from silicon melt by Czochralski method, comprising:
- a chamber;
- a crucible provided inside the chamber, and containing silicon melt;
- a heater provided at sides of the crucible to heat the silicon melt so that heat generation in a portion of the silicon melt corresponding to ⅕ to ⅔ of the total depth of the silicon melt from the surface is increased over surrounding portions of the silicon melt.
A silicon wafer manufactured from silicon single crystal grown by Czochralski method, wherein a balanced region where interstitial concentration is balanced with vacancy concentration occupies at least 10% of the area of the wafer.
A silicon wafer manufactured from silicon single crystal grown by Czochralski method, wherein an interstitial dominant region and a vacancy dominant region are arranged substantially asymmetric about the center.
A silicon wafer manufactured from silicon single crystal grown by Czochralski method, wherein point defect concentration is the same as or less than critical saturation concentration of vacancies that is a minimum vacancy concentration allowing the formation of micro precipitates in heat treatment.
A silicon single crystal ingot grown by Czochralski method, wherein point defect concentration is 1010˜1012/cm3.
Dependencies are inferred from the claim text.