Porous low-dielectric constant (k) thin film with controlled solvent diffusion
AssigneeSamsung Corning Co., Ltd.
InventorsKwang Lee, Jin Yim
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AssigneeSamsung Corning Co., Ltd.
InventorsKwang Lee, Jin Yim
Estimating the term…
A porous low-dielectric constant thin film with controlled solvent diffusion into pores of the porous thin film. The porous thin film i s formed from a composition including a porogen containing at least one π-π interacting functional group, a thermostable matrix precursor, and a solvent dissolving the porogen and the matrix precursor. The porous thin film thus formed has mesopores not smaller than 10 nm in size and has a solvent diffusion rate not higher than 30 μm2/sec. Due to the presence of the large pores, the porous thin film can greatly inhibit solvent diffusion into the pores of the thin film, which is encountered during wet processes, without substantial changes in dielectric constant, elastic modulus and hardness depending on the porosity of the thin film.
A porous thin film formed from a composition comprising a porogen comprising at least one π-π interacting functional group, a thermostable matrix precursor, and a solvent dissolving the porogen and the matrix precursor,
Dependencies are inferred from the claim text.