Heating treatment device, heating treatment method and fabrication method of semiconductor device

A method of forming a semiconductor device comprising:

• forming a film comprising silicon over a substrate;
• irradiating said film with a linear light having a wavelength region to subject bonds of atoms constituting said film to a vibrational excitation from one side of the substrate while scanning the linear light;
• irradiating said film with a linear ultraviolet or visible light from another side of the substrate while scanning the linear ultraviolet or visible light;
• and
• forming a gate electrode with a gate insulating film interposed therebetween after irradiating the linear light and irradiating the linear ultraviolet or visible light.

A method of forming a semiconductor device comprising:

• forming a film comprising silicon over a substrate;
• irradiating said film with a linear light having a wavelength of 500 nm to 20 μm from one side of the substrate while scanning the linear light;
• irradiating said film with a linear ultraviolet or visible light from another side of the substrate while scanning the linear ultraviolet or visible light;
• and
• forming a gate electrode with a gate insulating film interposed therebetween after irradiating the linear light and irradiating the linear ultraviolet or visible light.

A method of forming a semiconductor device comprising:

• forming a film comprising silicon over a substrate;
• irradiating said film with a linear infrared light from one side of the substrate while scanning the linear infrared light;
• irradiating said film with a linear light having a wavelength region to subject bonds of atoms constituting said film to an electron excitation from another side of the substrate while scanning the linear light;
• and
• forming a gate electrode with a gate insulating film interposed therebetween after irradiating the linear infrared light and irradiating the linear light.

A method of forming a semiconductor device comprising:

• forming a film comprising silicon over a substrate;
• irradiating said film with a first linear light having a wavelength region to subject bonds of atoms constituting said film to a vibrational excitation from one side of the substrate while scanning the first linear light;
• irradiating said film with a second linear light having a wavelength region to subject bonds of atoms constituting said film to an electron excitation from another side of the substrate while scanning the second linear light;
• and
• forming a gate electrode with a gate insulating film interposed therebetween after irradiating the first linear light and irradiating the second linear light.

A method of forming a semiconductor device comprising:

• forming a film comprising silicon over a substrate;
• irradiating said film with a first linear light having a wavelength of 500 nm to 20 μm from one side of the substrate while scanning the first linear light;
• irradiating said film with a second linear light having a wavelength region to subject bonds of atoms constituting said film to an electron excitation from another side of the substrate while scanning the second linear light;
• and
• forming a gate electrode with a gate insulating film interposed therebetween after irradiating the first linear light and irradiating the second linear light.

A method of forming a semiconductor device comprising:

• forming a film comprising silicon over a substrate;
• irradiating said film with a linear infrared light from one side of the substrate while scanning the linear infrared light;
• irradiating said film with a linear light having a wavelength 10 to 600 nm from another side of the substrate while scanning the linear light;
• and
• forming a gate electrode with a gate insulating film interposed therebetween after irradiating the linear infrared light and irradiating the linear-light.

A method of forming a semiconductor device comprising:

• forming a film comprising silicon over a substrate;
• irradiating said film with a first linear light having a wavelength region to subject bonds of atoms constituting said film to a vibrational excitation from one side of the substrate while scanning the first linear light;
• irradiating said film with a second linear light having a wavelength of 500 nm to 20 μm from one side of the substrate while scanning the second linear light;
• and
• forming a gate electrode with a gate insulating film interposed therebetween after irradiating the first linear light and irradiating the second linear light.

A method of forming a semiconductor device comprising:

• forming a film comprising silicon over a substrate;
• irradiating said film with a first linear light having a wavelength of 500 nm to 20 μm from one side of the substrate while scanning the first linear light;
• irradiating said film with a second linear light having a wavelength of 500 nm to 20 μm from one side of the substrate while scanning the second linear light;
• and
• forming a gate electrode with a gate insulating film interposed therebetween after irradiating the first linear light and irradiating the second linear light.