Method for forming ultra thin oxide layer by ozonated water
AssigneeIndustrial Technology Research Institute
InventorsYung-Yu Chen, Kon-Tsu Kin, Chiou-Mei Chen, Jen-Chung Lou
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Abstract
The present invention relates to a method for forming an ultra thin oxide layer by using an ozonated water, which comprises the steps of dissolving an ozone-containing gas in deionized water to form an ozonated water, and immersing a silicon wafer in the ozonated water to from an ultra thin oxide layer on the wafer. The method according to the present invention can substitute for the conventional high temperature process for growing an ultra thin oxide layer and form an ultra thin oxide layer in high density and high uniformity by taking the advantages of time-saving, energy-saving but without conducting at an elevated temperature.
Claims10
A method for forming an ultra thin oxide layer by using an ozonated water, which comprises the steps of:
- (c) contacting an ozonated water with a substrate, in which the ozonated water contains the ozone at a concentration of from 10 ppb to 20 ppm;
- and
- (d) separating the substrate from the ozonated water, thereby an ultra thin oxide layer in a thickness of from 0.1 to 2.5 nm has been formed on the surface of the substrate.
Dependencies are inferred from the claim text.