Method of forming a gate insulating layer of a semiconductor device using deuterium gas

A method of forming a gate oxide layer of a semiconductor device, the method comprising:

• introducing deuterium and oxygen sequentially into a reaction chamber, respectively;
• making a deuterium oxygen vapor from the deuterium and the oxygen by a pyro reaction;
• and
• heating a silicon wafer in the deuterium oxygen vapor, thereby forming a silicon oxygen layer on a silicon wafer surface.

A method of forming an oxide layer of a semiconductor device, the method comprising:

• providing a semiconductor substrate into a reaction chamber;
• maintaining, for a first predetermined time, the semiconductor substrate at a low temperature in an inert gas;
• exposing the semiconductor substrate to oxygen at a high temperature;
• exposing the semiconductor substrate to deuterium gas at the high temperature;
• and
• decreasing the temperature of the semiconductor substrate to the low temperature while exposing the semiconductor substrate to the inert gas.

A method of forming an oxide layer of a semiconductor device, the method comprising:

• providing a semiconductor substrate into a reaction chamber;
• maintaining, for a first predetermined time, the semiconductor substrate at a low temperature in an inert gas;
• exposing the semiconductor substrate to oxygen at a high temperature;
• purging the oxygen gas from the reaction chamber by the inert gas;
• and
• decreasing the temperature of the semiconductor substrate to the low temperature while exposing the semiconductor substrate to the inert gas and deuterium gas.

A method of forming an oxide layer of the semiconductor device, the method comprising:

• introducing a semiconductor substrate into a reaction chamber;
• maintaining, for a first predetermined time, the semiconductor substrate at a low temperature in an inert gas;
• exposing the semiconductor substrate to oxygen gas at a high temperature higher than the low temperature;
• exposing the semiconductor substrate to the inert gas at the high temperature;
• and
• decreasing the temperature of the semiconductor substrate to the low temperature while exposing the semiconductor substrate to the inert gas.