Method of forming at least one thin film device
AssigneeHewlett-Packard Development Company, L.P.
InventorsCarl Taussig, Ping Mei, Han-Jun Kim
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Abstract
This invention provides a method of forming at least one thin film device, such as for example a thin film transistor. The method includes providing a substrate and depositing a plurality of thin film device layers upon the substrate. An imprinted 3D template structure is provided upon the plurality of thin film device layers. The plurality of thin film layers and 3D template structure are etched and at least one thin film layer is undercut.
Claims45
A method of forming at least one thin film device comprising:
- providing a substrate;
- depositing a plurality of thin film device layers upon the substrate;
- providing an imprinted 3D template structure upon the plurality of thin film device layers;
- etching the plurality of thin film device layers and 3D template structure;
- and
- undercutting at least one thin film device layer.
A method of forming at least one thin film device comprising:
- providing a flexible substrate;
- depositing a plurality of thin film device layers upon the flexible substrate;
- depositing an imprint polymer upon the plurality of thin film device layers;
- forming a 3D template in the imprint polymer, the 3D template masking at least a portion of the thin film device layers;
- the 3D template having a plurality of different vertical heights;
- etching unmasked portions of the thin film device layers thereby exposing at least a portion of the substrate;
- and
- undercutting at least one thin film device layer thereby providing at least one bridged island.
A method of forming at least one thin film device comprising:
- providing a substrate;
- depositing a plurality of stacked thin film device layers upon the substrate, the stack including a bottom layer and a top layer;
- depositing an imprint polymer upon the plurality of thin film device layers;
- forming a 3D template in the imprint polymer, the 3D template masking at least a portion of the thin film device layers;
- the 3D template having a plurality of different vertical heights;
- etching unmasked portions of the thin film device layers thereby exposing at least a portion of the substrate;
- undercutting the bottom layer thereby providing at least one bridge island;
- etching through the lowest vertical height thereby exposing at least a portion of the thin film layers;
- etching the exposed portion of the thin film layers thereby exposing the bottom layer;
- and
- etching through the remaining lowest vertical height, thereby exposing at least a portion of the top layer.
A method of forming at least one thin film device comprising:
- providing a substrate;
- depositing a plurality of stacked thin film device layers upon the substrate, the stack including a bottom layer and a top layer;
- depositing an imprint polymer upon the plurality of thin film device layers;
- forming a 3D template in the imprint polymer, the 3D template masking at least a portion of the thin film device layers;
- the 3D template having two different vertical heights;
- etching unmasked portions of the thin film device layers thereby exposing at least a portion of the substrate, the 3D template providing at least one feature to promote a plurality of simply connected regions in the bottom layer;
- undercutting the bottom layer thereby providing a plurality of simply connected regions beneath a single simply connected region of an adjacent thin film device layer;
- etching through the lowest vertical height of the 3D template thereby exposing at least a portion of the thin film layers;
- etching the exposed portion of the thin film layers thereby exposing the bottom layer;
- and
- etching through the remaining lowest vertical height of the 3D template, thereby exposing at least a portion of the top layer.
A method of forming at least one thin film device comprising:
- providing a substrate;
- depositing a plurality of stacked thin film device layers upon the substrate, the stack including a bottom layer and a top layer;
- depositing an imprint polymer upon the plurality of thin film device layers;
- forming a 3D template in the imprint polymer, the 3D template masking at least a portion of the thin film device layers;
- the 3D template having three different vertical heights;
- etching unmasked portions of the thin film device layers thereby exposing at least a portion of the substrate, the 3D template providing at least one feature to promote a plurality of simply connected regions in the bottom layer;
- undercutting the bottom layer thereby providing a plurality of simply connected regions beneath a single simply connected region of an adjacent thin film device layer;
- etching through the lowest vertical height of the 3D template thereby exposing at least a portion of the thin film layers;
- etching the exposed portion of the thin film layers thereby exposing the bottom layer;
- etching through the next lowest vertical height of the 3D template, thereby exposing at least a portion of the top layer;
- and
- etching through the exposed portion of the top layer thereby exposing a first sub layer, the first sub layer deposited between the top and bottom layers.
At least one thin-film device provided by an undercutting SAIL process comprising:
- a substrate at a lowest height;
- a gate conductor upon the substrate;
- a channel aligned above a portion of the gate conductor, the channel proximate to an intermediate height;
- and
- a source and drain at a highest height and aligned to the channel, the source and drain supported as bridged islands in part by simply connected regions.
Dependencies are inferred from the claim text.