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US 2006/0134912 A1Published application
Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants
AssigneeMicron Technology, Inc.
InventorsRavi Iyer, Sujit Sharan
Life of this patent
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Abstract
A process for depositing titanium metal layers via chemical vapor deposition is disclosed. The process provides deposited titanium layers having a high degree of conformality, even in trenches and contact openings having aspect ratios greater than 1:5.
Claims28
A plasma enhanced chemical vapor deposition process comprising:
- admitting a hydrocarbon gas and a titanium gas into a chamber;
- forming a plasma in the chamber having a power level substantially greater than a first ionization energy but less than a second ionization energy of the hydrocarbon gas for forming hydrocarbon radicals therein;
- and
- causing a substrate having a temperature for some of the radicals formed from the hydrocarbon gas to react with some chlorine atoms from the titanium tetrachloride gas for depositing titanium metal on a portion of a surface of the substrate.
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A plasma enhanced chemical vapor deposition process comprising:
- admitting hydrocarbon gas and a titanium tetrachloride into a chamber;
- forming a plasma within the deposition chamber of the hydrocarbon gas for forming hydrocarbon radicals;
- maintaining the plasma at a power level substantially greater than a first ionization energy, but less than a second ionization energy, of the hydrocarbon gas for forming the hydrocarbon radicals;
- and
- causing a semiconductor wafer having a temperature sufficient to induce some of the hydrocarbon radicals to react with some chlorine atoms from the titanium tetrachloride gas for forming chlorinated hydrocarbon molecules for depositing titanium metal on a portion of a surface of the semiconductor wafer.
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Dependencies are inferred from the claim text.