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OwnerAlexander Borovik, Chongying Xu +5inventors
InventorsAlexander Borovik, Chongying Xu, Thomas Baum, Steven Bilodeau, Jeffrey Roeder, Abigail Ebbing, Daniel Vestyck
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An organosilicon precursor for vapor deposition, e.g., low pressure (<100 Torr), plasma-enhanced chemical vapor deposition (PECVD) of a low k, high strength dielectric film, wherein the precursor includes at least one of: (i) silicon-pendant oxiranyl functionality; and (ii) a disilyl moiety of the formula wherein x is an integer having a value of from 0 to 4 inclusive. These precursors are useful for the formation of dielectric films having dielectric constants on the order of ˜3 and less, and a hardness exceeding ˜1 GigaPascals.
An organosilicon precursor for vapor deposition of a low k, high strength dielectric film, wherein the precursor comprises a disilyl moiety of the formula
A method of synthesizing a bridged disilane compound of formula (II):
A method of forming a low k, high strength dielectric film on a substrate, comprising vapor depositing said film on the substrate from a precursor comprising a disilyl moiety of the formula
Dependencies are inferred from the claim text.