Method for preparing ge1-x-ysnxey (e=p, as, sb) semiconductors and related si-ge-sn-e and si-ge-e analogs

A method for synthesizing a compound having the formula E(GeH3)3 wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P), the method comprising combining GeH3Br with [(CH3)3Si]3E to obtain E(GeH3)3 according to the formula:

• 3 GeH3Br+[(CH3)3Si)]3E→3(CH3)3Si Br+(GeH3)3E

A method for doping a region of a semiconductor material in a chemical vapor deposition reaction chamber, the method comprising introducing into the chamber a gaseous precursor having the formula E(GeH3)3, wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P).

A method for depositing a doped epitaxial Ge—Sn layer on a substrate in a chemical vapor deposition reaction chamber, the method comprising:

• introducing into the chamber a gaseous precursor comprising SnD4 mixed in H2 under conditions whereby the epitaxial Ge—Sn layer is formed on the substrate;
• and
• introducing into the chamber a gaseous precursor having the formula E(GeH3)3, wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P).

A method for forming a Group IV semiconductor film, the method comprising

• forming the Group IV semiconductor by a chemical vapor deposition method, said Group IV semiconductor film being doped with impurities at a concentration ranging from about 1021 atoms/cm3 to about several percent, the impurities being selected from the group consisting of arsenic (As), phosporous (P) and antimony (Sb).

A method for forming a Group IV semiconductor film, the method comprising:

• forming the Group IV semiconductor film by a chemical vapor deposition method;
• and
• while forming the Group IV semiconductor film, doping the film with impurities at a concentration ranging from about 1021 atoms/cm3 to about 3 at. %, the impurities being selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P).

A method of preparing (E)Hx(GeH3)3-x, where x=1 or 2 and E is selected from the group consisting of P, As, Sb, the method comprising reacting inorganic or organometallic compounds of the E element with an alkali germyl or a halogenated germane.