Method of enhancing the photoconductive properities of a semiconductor and method of producing a semiconductor with enhanced photoconductive properties
AssigneeTeraView Limited
InventorsMichael Evans, William Tribe
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Abstract
A semiconductor material with photoconductive properties and a method of the semiconductor, wherein a base material is grown and then annealed post-growth at a temperature of 475° C. or less. It has been found that be annealing at temperatures of 475° C., or less the carrier lifetime of the material and the resistivity can be optimised so as to obtain semiconductor with useful photoconductive properties.
Claims26
A method of determining optimal annealing conditions for a semiconductor material comprising:
- obtaining a first set of values indicative of resistivity of the material for a plurality of annealing temperatures;
- obtaining a second set of values indicative of carrier lifetime of the material for a plurality of annealing temperatures;
- and
- comparing the first and second set of values to determine an annealing temperature or a range of annealing temperatures where the carrier lifetime and the resistivity of the material are optimized.
A photoconductive element comprising InGaAs, said InGaAs having a carrier lifetime of at most 1 ps.
A photoconductive antenna comprising a photoconducting substrate and two electrodes provided on the surface of said photoconducting substrate, said photoconducting substrate comprising InGaAs having a carrier lifetime of less than 1 ps.
An investigative system comprising:
- a laser configured to emit a pump beam having a wavelength in the range from 1.3 and 1.55 μm,
- an emitter configured to emit emitted radiation in response to irradiation by said pump beam;
- and
- a detector for detecting said emitted radiation,
- wherein either or both of the emitter or detector comprise InGaAs.
26-29. (canceled)
Dependencies are inferred from the claim text.