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US 2006/0134891 A1Published application
Method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ld.
InventorsHideto Ohnuma, Kouki Inoue
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Abstract
An object of the present invention is to provide a method for manufacturing a semiconductor device in which, after crystallizing by using an element that promotes crystallization, holes are prevented from being generated in a crystalline semiconductor film with a concentration of the element in the crystalline semiconductor film decreased by performing gettering. To solve the problem, as a feature of the structure of the invention, in the case of removing a silicon oxide film formed over the semiconductor film, an etchant made of a solution containing fluorine and a substance having surface activity is used.
Claims63
A method for manufacturing a semiconductor device comprising the steps of:
- forming a first silicon oxide film over a first crystalline semiconductor film crystallized by using an element that promotes crystallization, the first crystalline semiconductor film comprising silicon;
- forming a second semiconductor film comprising amorphous silicon over the first silicon oxide film;
- performing a heat treatment wherein a second silicon oxide film is formed on the second semiconductor film;
- and
- removing the second silicon oxide film by using a solution containing fluorine and a substance having surface activity.
2 more elements
A method for manufacturing a semiconductor device comprising the steps of:
- forming a first silicon oxide film over a first crystalline semiconductor film crystallized by using an element that promotes crystallization, the first crystalline semiconductor film comprising silicon;
- forming a second semiconductor film comprising amorphous silicon over the first silicon oxide film;
- performing a heat treatment;
- removing the second semiconductor film;
- and
- removing the first silicon oxide film formed over the first crystalline semiconductor film by using a solution containing fluorine and a substance having surface activity.
3 more elements
A method for manufacturing a semiconductor device comprising the steps of:
- irradiating a first crystalline semiconductor film crystallized by using an element that promotes crystallization with laser light, the first crystalline semiconductor film comprising silicon;
- removing a first silicon oxide film formed on the surface of the first crystalline semiconductor film with the irradiation of the laser light by using a solution containing fluorine and a substance showing having surface activity;
- forming a second silicon oxide film over the first crystalline semiconductor film;
- forming a second semiconductor film comprising amorphous silicon over the second silicon oxide film;
- performing a heat treatment wherein a third silicon oxide film is formed on the second semiconductor film;
- and
- removing the third silicon oxide film by using a solution containing fluorine and a substance having surface activity.
4 more elements
A method for manufacturing a semiconductor device comprising the steps of:
- irradiating a first crystalline semiconductor film crystallized by using an element that promotes crystallization with laser light, the first crystalline semiconductor film comprising silicon;
- removing a first silicon oxide film formed on the surface of the first crystalline semiconductor film with the irradiation of the laser light by using a solution containing fluorine and a substance showing having surface activity;
- forming a second silicon oxide film over the first crystalline semiconductor film;
- forming a second semiconductor silicon film comprising amorphous silicon over the second silicon oxide film;
- performing a heat treatment;
- removing the second semiconductor film;
- and
- removing the second silicon oxide film formed over the first crystalline semiconductor film by using a solution containing fluorine and a substance having surface activity.
5 more elements
A method for manufacturing a semiconductor device comprising the steps of:
- forming a first silicon oxide film over a first crystalline semiconductor film crystallized by using an element that promotes crystallization, the first crystalline semiconductor film comprising silicon;
- forming a second semiconductor film comprising amorphous silicon over the first silicon oxide film;
- performing a heat treatment wherein a second silicon oxide film is formed on the second semiconductor film;
- and
- removing the second silicon oxide film by using a solution containing fluorine and a substance having surface activity.
- removing the second semiconductor film;
- and
- removing the first silicon oxide film formed over the first crystalline semiconductor film by using a solution containing fluorine and a substance having surface activity.
5 more elements
A method for manufacturing a semiconductor device comprising the steps of:
- irradiating a first crystalline semiconductor film crystallized by using an element that promotes crystallization with laser light, the first crystalline semiconductor film comprising silicon;
- removing a first silicon oxide film formed on the surface of the first crystalline semiconductor film with the irradiation of the laser light by using a solution containing fluorine and a substance having surface activity;
- forming a second silicon oxide film over the first crystalline semiconductor film;
- forming a second semiconductor film comprising amorphous silicon over the second silicon oxide film;
- performing a heat treatment wherein a third silicon oxide film is formed on the second semiconductor film;
- and
- removing the third silicon oxide film by using a solution containing fluorine and a substance having surface activity.
- removing the second semiconductor film;
- and
- removing the second silicon oxide film formed over the first crystalline semiconductor film by using a solution containing fluorine and a substance having surface activity.
7 more elements
A method for manufacturing a semiconductor device comprising the steps of:
- patterning a first crystalline semiconductor film crystallized by using an element that promotes crystallization to obtain a desired-shape, the first crystalline semiconductor film comprising silicon;
- removing a first silicon oxide film formed on the surface of the first crystalline semiconductor film by using a solution containing fluorine and a substance having surface activity;
- and
- forming a gate insulating film by covering the first crystalline semiconductor film.
1 more element
A method for manufacturing a semiconductor device comprising the steps of:
- forming a first crystalline semiconductor film crystallized by using an element that promotes crystallization, the first crystalline semiconductor film comprising silicon;
- removing a first silicon oxide film formed on a surface of the first crystalline semiconductor film by using a solution containing fluorine and a substance having surface activity;
- forming a second silicon oxide film on the surface of the first crystalline semiconductor film;
- introducing impurities to control a threshold value of the semiconductor device, and
- forming a thin film transistor.
2 more elements
A method for manufacturing a semiconductor device comprising the steps of:
- forming a first crystalline semiconductor film crystallized by using an element that promotes crystallization, the first crystalline semiconductor film comprising silicon;
- forming a contact hole in an insulating film covering the first crystalline semiconductor film;
- removing a first silicon oxide film formed on a surface of the first crystalline semiconductor film in the contact hole by using a solution containing fluorine and a substance having surface activity, and
- forming a metal wiring connected to the first crystalline semiconductor film.
1 more element
Dependencies are inferred from the claim text.