Method of manufacturing a slice of semiconductor
AssigneeAxalto SA
InventorsJean-Noel Audoux, Denis Groeninck
Life of this patent
Estimating the term…
Abstract
A method of manufacturing an integrated circuit element from a silicon wafer, the silicon wafer having an active face and an inactive face, a passivation layer being deposited on the active face, where the method includes: an organic-layer-depositing step, in which an organic layer is deposited on the inactive face of the silicon wafer using a spin coating technique to obtain a sandwich-like structure, the passivation layer and the organic layer having substantially the same thickness, and a wafer-sawing step, in which a slice of the silicon wafer is sawed so as to obtain a several integrated circuit elements.
Claims6
-10. (canceled)
A method of manufacturing an integrated circuit element from a silicon wafer, the silicon wafer comprising an active face and an inactive face, a passivation layer being deposited on the active face, wherein the method comprises the following steps:
- a. an organic-layer-depositing step, in which an organic layer is deposited on the inactive face of the silicon wafer using a spin coating technique so as to obtain a sandwich-like structure, the passivation layer and the organic layer having substantially the same thickness;
- and
- b. a wafer-sawing step, in which a slice of the silicon wafer is sawed so as to obtain a plurality of integrated circuit elements.
The method according to claim 1, wherein the organic layer is a polyimide.
The method according to claim 1, wherein the active face is provided with a second organic layer.
The method according to claim 4, wherein the second organic layer is made of a photosensitive resin.
A portable object of the smart card type, wherein the portable object comprises the integrated circuit element obtained by the method of claim 1.
Dependencies are inferred from the claim text.