Manufacturing method of semiconductor device

A method of manufacturing a semiconductor device comprising:

• forming a semiconductor layer over a substrate;
• and
• irradiating a pulse laser beam to said semiconductor layer selectively in a position specified by data of a mask for patterning said semiconductor layer to perform a lateral growth of said semiconductor layer,
• wherein said pulse laser beam has a pulse width of 50 ns or more, and
• wherein attenuation area width from peak position of an optical power of said pulse laser beam to a point where the power decreases to 50% is 10 μm or less.

A method of manufacturing a semiconductor device comprising:

• forming a semiconductor layer over a substrate;
• and
• patterning said semiconductor layer into a first island-like semiconductor layer including a second island-like semiconductor layer to become an active layer of a thin film transistor in accordance with a layout information of said thin film transistor;
• irradiating a pulse laser beam to said first island-like semiconductor layer to perform a lateral growth of said first island-like semiconductor layer;
• and
• etching a peripheral area of said first island-like semiconductor layer to form said second island-like semiconductor layer to become said active layer of said thin film transistor,
• wherein said pulse laser beam has a pulse width of 50 ns or more, and
• wherein attenuation area width from peak position of an optical power of said pulse laser beam to a point where the power decreases to 50% is 10 μm or less.