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US 2006/0134872 A1Published application
Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain
AssigneeIntel Corporation
InventorsMichael Hattendorf, Jack Hwang, Anand Murthy, Andrew Westmeyer
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Abstract
Some embodiments of the present invention include providing carbon doped regions and raised source/drain regions to provide tensile stress in NMOS transistor channels.
Claims42
An apparatus comprising:
- a gate structure atop a substrate;
- a raised drain structure atop the substrate;
- a raised source structure atop the substrate;
- and
- a substitutional carbon region below the substrate surface and below the raised drain structure to induce tensile stress in a channel region.
2 more elements
An apparatus comprising:
- a substitutional carbon region below a substrate surface to induce tensile stress in a channel region;
- and
- a raised drain structure above the substrate surface and above the substitutional carbon region.
An apparatus comprising:
- a gate structure atop a substrate;
- a first spacer on the substrate and adjacent to the gate structure;
- a raised source structure on the substrate and adjacent to the first spacer;
- a second spacer on the substrate and adjacent to the gate structure;
- a raised drain structure on the substrate and adjacent to the second spacer;
- a first tip implant region below the substrate surface and below the raised source structure;
- a second tip implant region below the substrate surface and below the raised drain structure;
- a first substitutional carbon region below the substrate surface and below the raised source structure to induce stress in a channel;
- and
- a second substitutional carbon region below the substrate surface and below the raised drain structure to induce stress in the channel, wherein the bottom of the first substitutional carbon region is below the bottom of the first tip implant region and the bottom of the second substitutional carbon region is below the bottom of the second tip implant region.
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A method comprising:
- forming a gate structure on a substrate;
- performing an amorphization implant on the substrate;
- implanting carbon into the substrate;
- annealing the substrate to form a substitutional carbon region;
- and
- forming a raised source structure and a raised drain structure on the substrate.
3 more elements
Dependencies are inferred from the claim text.