Method of manufacturing semiconductor device
AssigneeElpida Memory, Inc.
InventorYasushi Yamazaki
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Abstract
A silicon nitride film is formed on a P-type silicon substrate; an opening of a predetermined pattern is formed in the silicon nitride film; a gate trench is formed on the semiconductor substrate using a silicon nitride film as a mask; and then a polycrystalline silicon film is embedded inside the gate trench and within the opening to self-alignedly form a gate electrode. Further, after a high melting point metal film such as cobalt or the like is deposited on an entire surface of the silicon nitride film by a sputtering method, an annealing process is performed; and, surplus metal is further eliminated to form a silicide of these metals on the surface of the polycrystalline silicon film.
Claims7
A method of manufacturing semiconductor device, comprising:
- a first step for forming a protective insulating film on a semiconductor substrate;
- a second step for forming an opening of a predetermined pattern in said protective insulating film;
- a third step for forming a gate trench on said semiconductor substrate using said protective insulating film as a mask;
- a fourth step for forming a gate electrode by embedding electrode material inside said gate trench and within said opening;
- and
- a fifth step for eliminating said protective insulating film.
Dependencies are inferred from the claim text.