Methods of manufacturing a thin film including zirconium titanium oxide and methods of manufacturing a gate structure, a capacitor and a flash memory device including the same

A method of forming a thin film comprising:

• introducing a reactant comprising a mixture of a zirconium precursor and a titanium precursor onto the substrate, wherein a flow rate ratio between the zirconium precursor and the titanium precursor is in a range from about 1.0:0.3 to about 1.0:3.0;
• and
• introducing an oxidizing agent onto the substrate to form a single layer structure including zirconium titanium oxide on the substrate.

A method of forming a capacitor in a semiconductor device comprising:

• introducing a reactant comprising a mixture of a zirconium precursor and a titanium precursor onto a lower electrode and introducing an oxidizing agent onto the lower electrode to form a dielectric layer comprising zirconium titanium oxide;
• and
• forming an upper electrode on the dielectric layer.

A method of manufacturing a flash memory device comprising:

• introducing a reactant comprising a mixture of a zirconium precursor and a titanium precursor onto a floating gate structure and introducing an oxidizing agent onto the floating gate structure to form a dielectric layer comprising zirconium titanium oxide on the floating gate structure;
• and
• forming a control gate on the dielectric layer.