Method of fabricating a semiconductor structure
AssigneeMacronix International Co., Ltd.
InventorSzu-Yu Wang
Life of this patent
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Abstract
A method of fabricating a semiconductor structure is disclosed. The method comprises the steps of: providing an intermediate structure, the intermediate structure comprising a substrate having an insulating layer thereon and an overlying gate structure; depositing an oxidation barrier layer on the intermediate structure; and exposing the oxidation barrier layer to a reactant which reduces defects in the oxidation barrier layer. The existence of the oxidation barrier layer helps to prevent oxide encroachment and edge oxide thickening of the insulating layer during subsequent processing.
Claims26
A method of fabricating a semiconductor structure, said method comprising the steps of:
- providing an intermediate structure, the intermediate structure comprising a substrate having an insulating layer thereon and an overlying gate structure;
- depositing an oxidation barrier layer on the intermediate structure;
- and
- exposing said oxidation barrier layer to a reactant which reduces defects in said oxidation barrier layer.
A method of forming a diffusion barrier on a sidewall of a gate transistor, said method comprising the steps of:
- providing a gate transistor comprising at least an insulating layer overlying a semiconductor substrate and a gate structure overlying said insulating layer, said gate transistor defining sidewalls extending away from said substrate;
- depositing an oxide layer on the gate transistor using a deposition process;
- and
- annealing the oxide layer to reduce defects in said oxide layer and to form said diffusion barrier which prevents the diffusion of reactants into said insulating layer and said overlying gate structure.
Dependencies are inferred from the claim text.