Method of forming pattern having step difference and method of making thin film transistor and liquid crystal display using the same
AssigneeLG. Philips LCD Co., Ltd.
InventorTae Oh
Life of this patent
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Abstract
A method of forming a pattern having a step difference and a method of making a thin film transistor and an LCD device using the method of forming the pattern. The method of forming a pattern having a step difference includes forming a first pattern having a predetermined shape in a first printing roll, rotating the first printing roll on a substrate to transfer the first pattern onto the substrate, forming a second pattern having a predetermined shape in a second printing roll, and rotating the second printing roll on the substrate onto which the first pattern is transferred, to transfer the second pattern onto the substrate.
Claims23
A method of forming a pattern having a step difference comprising the steps of:
- a) forming a first pattern having a predetermined shape on a first printing roll;
- b) rotating the first printing roll on a substrate to transfer the first pattern onto the substrate;
- c) forming a second pattern having a predetermined shape on a second printing roll;
- and
- d) rotating the second printing roll on the substrate, to transfer the second pattern onto the substrate.
A method of making a thin film transistor comprising the steps of:
- forming a gate electrode on a substrate;
- forming a gate insulating film on the substrate including the gate electrode;
- sequentially forming a semiconductor layer and a metal layer on the gate insulating film;
- forming a pattern having a step difference on the metal layer having a U-shape in cross-section by rotating a first printing roll on the metal layer to form a first pattern and rotating a second printing roll form a second pattern on the first pattern;
- etching the semiconductor layer and the metal layer using the pattern as a mask;
- and
- removing the pattern.
A method of making an LCD device comprising the steps of:
- preparing a first substrate where a thin film transistor is formed by
- forming a gate electrode on a substrate;
- forming a gate insulating film on the substrate including the gate electrode;
- sequentially forming a semiconductor layer and a metal layer on the gate insulating film;
- forming a pattern having a step difference on the metal layer having a U-shape in cross-section by rotating a first printing roll on the metal layer to form a first pattern and rotating a second printing roll form a second pattern on the first pattern;
- etching the semiconductor layer and the metal layer using the pattern as a mask;
- removing the pattern;
- preparing a second substrate formed on a color filter layer;
- and
- forming a liquid crystal layer between the substrates.
A method of forming a pattern having a step difference comprising the steps of:
- a) forming a first pattern having a predetermined shape on a first printing roll;
- b) forming a second pattern having a predetermined shape on a second printing roll;
- and
- b) sequentially rotating the first printing roll on a substrate to transfer the first pattern onto the substrate and rotating the second printing roll on the substrate, to transfer the second pattern onto the substrate.
A method of making a thin film transistor comprising the steps of:
- forming a gate electrode on a substrate;
- forming a gate insulating film on the substrate including the gate electrode;
- sequentially forming a semiconductor layer and a metal layer on the gate insulating film;
- sequentially rotating a first printing roll on a the metal layer to transfer a first pattern onto the metal layer and rotating a second printing roll on the first pattern to transfer a second pattern onto the first pattern to form a masking pattern having a step difference on the metal layer;
- etching the semiconductor layer and the metal layer using the masking pattern as a etch mask;
- and
- removing the pattern.
Dependencies are inferred from the claim text.